We appreciate your interest in part number 8001201JA, which is currently available for purchase here on Jet Force Aero. For your reference, this item is produced by Dla Land And Maritime and is listed with the NSN 5962-01-363-0915, as well as the description “Microcircuit Set.” If this matches your requirements, we encourage you to fill out the Request for Quote (RFQ) form featured on this page to receive tailored purchasing options on part number 8001201JA. All that we ask is that you submit as many details about your procurement needs as possible, such as your desired quantity, budget, and anticipated fulfillment timeframe, as this will enable our specialists to craft an ideal response for you.
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In addition to part number 8001201JA, be sure to explore our website further for related items produced by Dla Land And Maritime under the CAGE Code 67268 as you wish. We also feature catalogs to help you find additional options that are categorized under FSC 5962 Microcircuits Electronic and the NSN 5962-01-363-0915. Regardless of which NSN parts you need from us, rest assured that we will always treat you to affordable solutions where you never have to sacrifice quality or prompt fulfillment. We are ready to assist you with all your sourcing needs, so kick off quotation at your convenience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8769001RA | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
| CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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